2SC1906 0.05 a , 30 v npn plastic encapsulated transistor elektronische bauelemente 24-feb-2011 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a c e k f d b g h j ? base ? ? emitte r collector ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? high transition frequency applications ? vhf amplifier ? mixer, local oscillator absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 30 v collector to emitter voltage v ceo 19 v emitter to base voltage v ebo 2 v collector current - continuous i c 50 ma collector power dissipation p c 300 mw thermal resistance from junction to ambient r ja 416 c / w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v (br)cbo 30 - - v i c =0.01ma, i e =0 collector to emitter breakdown voltage v (br)ceo 19 - - v i c =3ma, i b =0 emitter to base breakdown voltage v (br)ebo 2 - - v i e =0.01a, i c =0 collector cut ? off current i cbo - - 0.5 a v cb =10v, i e =0 emitter cut ? off current i ebo - - 0.5 a v eb =2v, i c =0 dc current gain h fe 40 - - v ce =10v, i c =10ma collector to emitter saturation voltage v ce(sat) - - 1 v i c =20ma, i b =4ma transition frequency f t 600 - - mhz v ce =10v, i c =10ma collector output capacitance c ob - - 2 pf v cb =10v, i e =0, f=1mhz ? emitte r ? collector ? base to-92 ref. millimeter min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g 1.27 typ. h 1.10 - j 2.42 2.66 k 0.36 0.76
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